Invention Grant
- Patent Title: Method of making a transistor having a source and a drain obtained by recrystallization of semiconductor
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Application No.: US15602829Application Date: 2017-05-23
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Publication No.: US10170621B2Publication Date: 2019-01-01
- Inventor: Shay Reboh , Perrine Batude , Flavia Piegas Luce
- Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Applicant Address: FR Paris
- Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Current Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Current Assignee Address: FR Paris
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: FR1654628 20160524
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/324 ; H01L29/06 ; H01L21/8234 ; H01L21/8238 ; H01L29/786 ; H01L21/02 ; H01L29/417 ; H01L29/66 ; H01L21/265
Abstract:
Method of making a transistor, comprising the following steps: make a gate and a first spacer on a first channel region of a first crystalline semiconducting layer; make first crystalline semiconductor portions on the second source and drain regions; make the second regions amorphous and dope them; recrystallise the second regions and activate the dopants present in the second regions; remove the first portions; make a second spacer thicker than the first spacer; make second doped crystalline semiconductor portions on the second regions, said second portions and the second regions of the first layer together form the source and drain of the transistor.
Public/Granted literature
- US20170345931A1 METHOD OF MAKING A TRANSISTOR HAVING A SOURCE AND A DRAIN OBTAINED BY RECRYSTALLIZATION OF SEMICONDUCTOR Public/Granted day:2017-11-30
Information query
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