Invention Grant
- Patent Title: Processes for uniform metal semiconductor alloy formation for front side contact metallization and photovoltaic device formed therefrom
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Application No.: US15470508Application Date: 2017-03-27
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Publication No.: US10170644B2Publication Date: 2019-01-01
- Inventor: Kathryn C. Fisher , Qiang Huang , Satyavolu S. Papa Rao , David L. Rath
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent L. Jeffrey Kelly
- Main IPC: H01L31/0216
- IPC: H01L31/0216 ; H01L31/02 ; H01L31/0224 ; H01L31/18

Abstract:
A photovoltaic device is provided that includes a semiconductor substrate including a p-n junction with a p-type semiconductor portion and an n-type semiconductor portion one lying on top of the other, wherein an upper exposed surface of the semiconductor substrate represents a front side surface of the semiconductor substrate. A plurality of patterned antireflective coatings is located on the front side surface to provide a grid pattern including a busbar region and finger regions. The busbar region includes at least a real line interposed between at least two dummy lines. A material stack including at least one metal layer located on the semiconductor substrate in the busbar region and the finger regions.
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Information query
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