Invention Grant
- Patent Title: Semiconductor nanocrystal, and method of preparing the same
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Application No.: US14039788Application Date: 2013-09-27
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Publication No.: US10170648B2Publication Date: 2019-01-01
- Inventor: Shin Ae Jun , Eun Joo Jang , Soo Kyung Kwon , Taek Hoon Kim , Won Joo Lee
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Cantor Colburn LLP
- Priority: KR10-2012-0119887 20121026
- Main IPC: H01L31/0296
- IPC: H01L31/0296 ; H01L31/0304 ; H01L31/0352 ; B82Y40/00 ; B82Y30/00
Abstract:
A nanocrystal including a core including a Group III element and a Group V element, and a monolayer shell on the surface of the core, the shell including a compound of the formula ZnSexS(1-x), wherein 0≤x≤1, and wherein an average mole ratio of Se:S in the monolayer shell ranges from about 2:1 to about 20:1.
Public/Granted literature
- US20140117292A1 SEMICONDUCTOR NANOCRYSTAL, AND METHOD OF PREPARING THE SAME Public/Granted day:2014-05-01
Information query
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