Invention Grant
- Patent Title: Semiconductor device
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Application No.: US14591562Application Date: 2015-01-07
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Publication No.: US10170689B2Publication Date: 2019-01-01
- Inventor: Hironobu Tanigawa , Tetsuhiro Suzuki , Katsumi Suemitsu , Takuya Kitamura , Eiji Kariyada
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Koutou-ku, Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Koutou-ku, Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2014-009209 20140122
- Main IPC: H01L29/82
- IPC: H01L29/82 ; H01L43/08 ; G11C11/16
Abstract:
The present invention provides a magnetoresistive effect element which performs writing by a novel method. In a state in which a current does not flow in a magnetization free layer MFR, the magnetization free layer MFR has a magnetic wall MW1 on the side of a magnetization fixed layer MFX1. A magnetic wall MW2 is moved to the magnetic wall MW1 side by causing current to flow from the formed side of the magnetic wall MW1. Thus, an electrical resistance RMTJ between a reference layer REF and the magnetization free layer MFR changes from a low state to a high state.
Public/Granted literature
- US20150207063A1 SEMICONDUCTOR DEVICE Public/Granted day:2015-07-23
Information query
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