Invention Grant
- Patent Title: Cryogenic patterning of magnetic tunnel junctions
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Application No.: US15258265Application Date: 2016-09-07
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Publication No.: US10170697B2Publication Date: 2019-01-01
- Inventor: Anthony J. Annunziata , Chandrasekharan Kothandaraman , Nathan P. Marchack , Hiroyuki Miyazoe
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: H01L43/12
- IPC: H01L43/12 ; H01L43/08
Abstract:
Methods for forming magnetic tunnel junctions and structures thereof include cryogenic etching the layers defining the magnetic tunnel junction without lateral diffusion of reactive species.
Public/Granted literature
- US20180069174A1 CRYOGENIC PATTERNING OF MAGNETIC TUNNEL JUNCTIONS Public/Granted day:2018-03-08
Information query
IPC分类:
