Invention Grant
- Patent Title: Thin film transistor and manufacturing method thereof, display substrate, and display apparatus
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Application No.: US15511653Application Date: 2016-04-05
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Publication No.: US10170717B2Publication Date: 2019-01-01
- Inventor: Wei Huang
- Applicant: BOE TECHNOLOGY GROUP CO., LTD.
- Applicant Address: CN
- Assignee: BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee: BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee Address: CN
- Agency: Brooks Kushman P.C.
- Priority: CN201510329297 20150615
- International Application: PCT/CN2016/078424 WO 20160405
- International Announcement: WO2016/202050 WO 20161222
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L51/10 ; H01L23/24 ; H01L29/786 ; H01L27/12 ; H01L27/32 ; H01L23/373 ; H01L27/28 ; H01L51/00 ; H01L51/05
Abstract:
Provided is a thin film transistor and a manufacturing method thereof, a display substrate and a display apparatus. The thin film transistor includes a source electrode pattern and a drain electrode pattern arranged on a same layer and a heat dissipation layer arranged between the source electrode pattern and the drain electrode pattern.
Public/Granted literature
- US20180114933A1 THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF, DISPLAY SUBSTRATE, AND DISPLAY APPARATUS Public/Granted day:2018-04-26
Information query
IPC分类:
