Invention Grant
- Patent Title: GaN circuit drivers for GaN circuit loads
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Application No.: US15903398Application Date: 2018-02-23
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Publication No.: US10170922B1Publication Date: 2019-01-01
- Inventor: Daniel Marvin Kinzer , Santosh Sharma , Ju Zhang
- Applicant: Navitas Semiconductor, Inc.
- Applicant Address: US CA El Segundo
- Assignee: Navitas Semiconductor, Inc.
- Current Assignee: Navitas Semiconductor, Inc.
- Current Assignee Address: US CA El Segundo
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: H03B1/00
- IPC: H03B1/00 ; H03K3/00 ; H02J7/00 ; H02M3/157 ; H02M3/158 ; H02M1/088 ; H01L29/20 ; H01L27/088 ; H01L25/07 ; H03K19/0185 ; H03K17/10 ; H03K3/356 ; H03K3/012 ; H02M1/00

Abstract:
An electronic circuit is disclosed. The electronic circuit includes a GaN substrate, a first power supply node on the substrate, an output node, a signal node, and an output component on the substrate, where the output component is configured to generate a voltage at the output node based at least in part on a voltage at the signal node. The electronic circuit also includes a capacitor coupled to the signal node, where, the capacitor is configured to selectively cause the voltage at the signal node to be greater than the voltage of the first power supply node, such that the output component causes the voltage at the output node to be substantially equal to the voltage of the first power supply node.
Information query