Invention Grant
- Patent Title: High speed and high voltage driver
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Application No.: US15918933Application Date: 2018-03-12
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Publication No.: US10171075B2Publication Date: 2019-01-01
- Inventor: Gary Chunshien Wu
- Applicant: pSemi Corporation
- Applicant Address: US CA San Diego
- Assignee: pSemi Corporation
- Current Assignee: pSemi Corporation
- Current Assignee Address: US CA San Diego
- Agency: Jaquez Land Greenhaus LLP
- Agent Martin J. Jaquez, Esq.; Alessandro Steinfl, Esq.
- Main IPC: H03K17/687
- IPC: H03K17/687 ; H03K19/0175 ; H02M1/088 ; H03K17/10

Abstract:
Systems, methods, and apparatus for biasing a high speed and high voltage driver using only low voltage transistors are described. The apparatus and method are adapted to control biasing voltages to the low voltage transistors such as not to exceed operating voltages of the low voltage transistors while allowing for DC to high speed operation of the driver at high voltage. A stackable and modular architecture of the driver and biasing stages is provided which can grow with a higher voltage requirement of the driver. Capacitive voltage division is used for high speed bias voltage regulation during transient phases of the driver, and resistive voltage division is used to provide bias voltage at steady state. A simpler open-drain configuration is also presented which can be used in pull-up or pull-down modes.
Public/Granted literature
- US20180241393A1 High Speed and High Voltage Driver Public/Granted day:2018-08-23
Information query
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