Invention Grant
- Patent Title: Highly luminescent semiconductor nanocrystals
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Application No.: US12862195Application Date: 2010-08-24
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Publication No.: US10174243B2Publication Date: 2019-01-08
- Inventor: Andrew B. Greytak , Wenhao Liu , Peter M. Allen , Moungi G. Bawendi , Daniel G. Nocera
- Applicant: Andrew B. Greytak , Wenhao Liu , Peter M. Allen , Moungi G. Bawendi , Daniel G. Nocera
- Applicant Address: US MA Cambridge
- Assignee: MASSACHUSETTS INSTITUTE OF TECHNOLOGY
- Current Assignee: MASSACHUSETTS INSTITUTE OF TECHNOLOGY
- Current Assignee Address: US MA Cambridge
- Agency: Steptoe & Johnson LLP
- Main IPC: C09K11/88
- IPC: C09K11/88 ; C09K11/58

Abstract:
A semiconductor nanocrystal can have a photoluminescent quantum yield of at least 90%, at least 95%, or at least 98%. The nanocrystal can be made by sequentially contacting a nanocrystal core with an M-containing compound and an X donor, where at least one of the M-containing compound and the X donor is substoichiometric with respect to forming a monolayer on the nanocrystal core.
Public/Granted literature
- US20120049119A1 HIGHLY LUMINESCENT SEMICONDUCTOR NANOCRYSTALS Public/Granted day:2012-03-01
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