Invention Grant
- Patent Title: Edge-coupled semiconductor photodetector
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Application No.: US15668639Application Date: 2017-08-03
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Publication No.: US10175099B2Publication Date: 2019-01-08
- Inventor: Samuel C. Wang , Peter Lao , Dhiraj Kumar
- Applicant: Global Communications Semiconductors, LLC
- Applicant Address: US CA Torrance
- Assignee: GLOBAL COMMUNICATION SEMICONDUCTORS, LLC
- Current Assignee: GLOBAL COMMUNICATION SEMICONDUCTORS, LLC
- Current Assignee Address: US CA Torrance
- Agency: Morgan, Lewis & Bockius LLP
- Main IPC: G01J1/02
- IPC: G01J1/02 ; G01J1/04 ; G02B6/42 ; H01S5/0683

Abstract:
A device is disclosed for monitoring power from a laser diode. The device includes a substrate having a top surface and a first facet perpendicular to the top surface through which light enters the substrate. The device further includes a second facet onto which light that has entered the substrate through the first facet along an optical axis that is non-normal to the first facet is incident. The device further includes a photodiode fabricated on the top surface of the substrate for measuring an intensity of the light that enters the first facet of the substrate along the optical axis that is non-normal to the first facet. The light that has entered the substrate through the first facet along the optical axis that is non-normal to the first facet is reflected by the second facet toward a photoactive region of the photodiode.
Public/Granted literature
- US20180180468A1 Edge-Coupled Semiconductor Photodetector Public/Granted day:2018-06-28
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