Invention Grant
- Patent Title: Method of evaluating characteristics of ion implanted sample
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Application No.: US15158531Application Date: 2016-05-18
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Publication No.: US10175176B2Publication Date: 2019-01-08
- Inventor: Kuo-Sheng Chuang , You-Hua Chou
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
- Current Assignee Address: TW Hsinchu
- Agency: Cooper Legal Group, LLC
- Main IPC: G01N21/78
- IPC: G01N21/78 ; H01L21/66 ; H01L21/268 ; H01L21/265 ; H01L21/3105 ; G01N21/63

Abstract:
A method of evaluating characteristics of a work piece includes forming a photosensitive layer on the work piece. Then an ion implantation is performed on the work piece. The work piece is radiated, and an optical intensity of the photosensitive material on the work piece is calculated. The ion implantation pattern is evaluated according to the optical intensity. A chemical structure of the photosensitive material is changed upon the ion implantation. The work piece is recovered by reversing the chemical structure of the photosensitive material or removing the ion interrupted photosensitive material by chemicals.
Public/Granted literature
- US20170138863A1 METHOD OF EVALUATING CHARACTERISTICS OF ION IMPLANTED SAMPLE Public/Granted day:2017-05-18
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