Invention Grant
- Patent Title: Storage devices including dynamic internal thermal throttling
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Application No.: US15098427Application Date: 2016-04-14
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Publication No.: US10175667B2Publication Date: 2019-01-08
- Inventor: Kwangkyu Bang , Heeyoub Kang , HyoJae Bang , Kitaek Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel P.A.
- Priority: KR10-2015-0115524 20150817
- Main IPC: G05D23/00
- IPC: G05D23/00 ; G05B15/02 ; G06F3/06 ; G06F1/20
Abstract:
A storage device may include a nonvolatile memory including a plurality of memory blocks and a memory controller configured to determine a comparison between an idle current value of the nonvolatile memory and a reference current value and to adjust, based on the comparison, a start temperature at which the storage device begins operating speed control of the storage device.
Public/Granted literature
- US20170052551A1 STORAGE DEVICES INCLUDING DYNAMIC INTERNAL THERMAL THROTTLING Public/Granted day:2017-02-23
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