Estimation of level-thresholds for memory cells
Abstract:
Methods and apparatus are provided for determining level-thresholds for q-level memory cells. A group of the memory cells are read to obtain respective read signal components. The read signal components are processed in dependence on signal level to produce a signal level vector, comprising a series of elements, indicative of the distribution of read signal components in order of signal level. A plurality of possible sets of q−1 elements corresponding, respectively, to q−1 level-thresholds which partition the signal level vector into q segments, is then defined. The q−1 level-thresholds for the group of memory cells are then determined by selecting from said possible sets that set for which a predetermined difference function, dependent on differences in signal level for elements in each of said q segments for the set, has an optimum value.
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