Invention Grant
- Patent Title: NAND flash memory comprising a current sensing page buffer preventing voltage from discharging from a node during operation
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Application No.: US15349407Application Date: 2016-11-11
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Publication No.: US10176871B2Publication Date: 2019-01-08
- Inventor: Chiara Missiroli , Osama Khouri
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: IT102015000072011 20151112; IT102016000018123 20160222
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C16/24 ; G11C16/26 ; G11C16/10 ; G11C16/32 ; G11C16/34

Abstract:
A page buffer circuit may include: a first node; a first switching circuit configured to pre-charge the bit-line based on a voltage provided to the first switching circuit; a sensing node; a second switching circuit configured to discharge the sensing node when the voltage value of the first node is lower than a voltage value associated with a voltage inputted to the second switching circuit during an evaluation period; a sense latch configured to latch a voltage being determined based on the voltage level of the sensing node, during a strobe period; and a third switching circuit configured to prevent the voltage value of the first node from being lower than a voltage value associated with a voltage inputted to the third switching circuit independently from the voltage at the sense latch.
Public/Granted literature
- US20170140823A1 NAND FLASH MEMORY COMPRISING A CURRENT SENSING PAGE BUFFER Public/Granted day:2017-05-18
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