Invention Grant
- Patent Title: Methods, apparatus and system for gate cut process using a stress material in a finFET device
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Application No.: US15673232Application Date: 2017-08-09
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Publication No.: US10176995B1Publication Date: 2019-01-08
- Inventor: Xusheng Wu , Haigou Huang
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Williams Morgan, P.C.
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L21/265 ; H01L21/8234 ; H01L21/02 ; H01L21/768 ; H01L21/84 ; H01L21/28 ; H01L29/66
Abstract:
At least one method, apparatus and system disclosed herein involves a gate cut process using a stress material for a finFET device. A set of fins are formed on a semiconductor substrate. A gate region is formed above a portion of the set of fins. A gate cut trench is formed within the gate region. A dielectric material comprising an intrinsic stress is deposited into the gate cut region. A replacement metal gate process is performed in the gate region. Residue metal features are removed about the gate cut region.
Information query
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