Invention Grant
- Patent Title: Replacement metal gate and fabrication process with reduced lithography steps
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Application No.: US14452606Application Date: 2014-08-06
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Publication No.: US10176996B2Publication Date: 2019-01-08
- Inventor: Min Gyu Sung , Chanro Park , Hoon Kim
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Williams Morgan, P.C.
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L21/8238 ; H01L29/66 ; H01L29/49 ; H01L27/092 ; H01L21/28 ; H01L21/3213 ; H01L29/51
Abstract:
Embodiments of the present invention provide a replacement metal gate and a fabrication process with reduced lithography steps. Using selective etching techniques, a layer of fill metal is used to protect the dielectric layer in the trenches, eliminating the need for some lithography steps. This, in turn, reduces the overall cost and complexity of fabrication. Furthermore, additional protection is provided during etching, which serves to improve product yield.
Public/Granted literature
- US20160042954A1 REPLACEMENT METAL GATE AND FABRICATION PROCESS WITH REDUCED LITHOGRAPHY STEPS Public/Granted day:2016-02-11
Information query
IPC分类:
