Invention Grant
- Patent Title: Semiconductor structure and fabrication method therefor
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Application No.: US15651167Application Date: 2017-07-17
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Publication No.: US10177026B2Publication Date: 2019-01-08
- Inventor: Ta-wei Sung , Ming-Hui Li , Ming-Ying Tsai
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: H01L21/762
- IPC: H01L21/762 ; H01L29/78 ; H01L21/8234 ; H01L21/8238 ; H01L21/265 ; H01L29/66 ; H01L29/08
Abstract:
A method of fabricating a semiconductor structure. The method includes forming a sacrificial gate structure, depositing a dielectric material, and implanting the dielectric material using a silicon cluster gas. The silicon cluster gas has two or more silicon atoms.
Public/Granted literature
- US20180151413A1 SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREFOR Public/Granted day:2018-05-31
Information query
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