Invention Grant
- Patent Title: Method for reducing cracks in a step-shaped cavity
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Application No.: US15679914Application Date: 2017-08-17
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Publication No.: US10177027B2Publication Date: 2019-01-08
- Inventor: Xianchao Wang
- Applicant: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION , SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
- Applicant Address: CN Beijing CN Shanghai
- Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION,SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
- Current Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION,SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
- Current Assignee Address: CN Beijing CN Shanghai
- Agency: Kilpatrick Townsend & Stockton LLP
- Priority: CN201610805514 20160906
- Main IPC: H01L21/56
- IPC: H01L21/56 ; H01L21/768 ; H01L21/02 ; H01L21/3205 ; H01L23/532 ; H01L29/423 ; B81C1/00
Abstract:
A method for manufacturing a semiconductor device includes providing a semiconductor substrate including a substrate and a multilayer film having a step-shaped portion on the substrate; forming a protective layer covering the step-shaped portion of the multilayer film; forming a capping layer having a plurality of steps on the protective layer covering the semiconductor substrate; and removing at least one layer of the multilayer film to form a cavity that is defined by the capping layer and a remaining multilayer film that has the at least one layer removed. The thus formed semiconductor device does not have cracks in the steps of the capping layer when performing an etch process, thereby improving the performance of the semiconductor device.
Public/Granted literature
- US20180068888A1 METHOD FOR REDUCING CRACKS IN A STEP-SHAPED CAVITY Public/Granted day:2018-03-08
Information query
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