Invention Grant
- Patent Title: Integration of air gaps with back-end-of-line structures
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Application No.: US15790249Application Date: 2017-10-23
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Publication No.: US10177029B1Publication Date: 2019-01-08
- Inventor: Robert J. Fox, III , Sunil K. Singh
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Thompson Hine LLP
- Agent Anthony Canale
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/522 ; H01L23/532

Abstract:
Interconnect structures and methods for forming an interconnect structure. A sacrificial layer is formed on a substrate and an interconnect opening is formed that extends vertically through the sacrificial layer into the substrate. The interconnect opening is filled with a conductor to form a conductive feature. After filling the interconnect opening with the conductor, a dielectric layer is formed on the sacrificial layer. After the dielectric layer is formed on the sacrificial layer, the sacrificial layer is removed to form an air gap layer arranged vertically between the dielectric layer and the substrate.
Information query
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