Invention Grant
- Patent Title: Heat-dissipating structure and semiconductor module using same
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Application No.: US15501374Application Date: 2015-09-09
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Publication No.: US10177069B2Publication Date: 2019-01-08
- Inventor: Takashi Naito , Motomune Kodama , Takuya Aoyagi , Shigeru Kikuchi , Takashi Nogawa , Mutsuhiro Mori , Eiichi Ide , Toshiaki Morita , Akitoyo Konno , Taigo Onodera , Tatsuya Miyake , Akihiro Miyauchi
- Applicant: HITACHI, LTD.
- Applicant Address: JP Tokyo
- Assignee: HITACHI LTD.
- Current Assignee: HITACHI LTD.
- Current Assignee Address: JP Tokyo
- Agency: Volpe and Koenig, P.C.
- Priority: JP2014-190671 20140919
- International Application: PCT/JP2015/075526 WO 20150909
- International Announcement: WO2016/043095 WO 20160324
- Main IPC: C03C8/02
- IPC: C03C8/02 ; C03C8/08 ; C03C8/24 ; H01L23/373 ; C09J1/00 ; C09J11/04 ; H01L21/52 ; H01L25/07 ; H01L25/18 ; H01L23/00

Abstract:
A heat-dissipating structure is formed by bonding a first member and a second member, each being any of a metal, ceramic, and semiconductor, via a die bonding member; or a semiconductor module formed by bonding a semiconductor chip, a metal wire, a ceramic insulating substrate, and a heat-dissipating base substrate including metal, with a die bonding member interposed between each. At least one of the die bonding members includes a lead-free low-melting-point glass composition and metal particles. The lead-free low-melting-point glass composition accounts for 78 mol % or more in terms of the total of the oxides V2O5, TeO2, and Ag2O serving as main ingredients. The content of each of TeO2 and Ag2O is 1 to 2 times the content of V2O5, and at least one of BaO, WO3, and P2O5 is included as accessory ingredients, and at least one of Y2O3, La2O3, and Al2O3 is included as additional ingredients.
Public/Granted literature
- US20170236768A1 HEAT-DISSIPATING STRUCTURE AND SEMICONDUCTOR MODULE USING SAME Public/Granted day:2017-08-17
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