Invention Grant
- Patent Title: Wafer level embedded heat spreader
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Application No.: US15641116Application Date: 2017-07-03
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Publication No.: US10177073B2Publication Date: 2019-01-08
- Inventor: Wei Sen Chang , Tsung-Hsien Chiang , Yen-Chang Hu , Ching-Wen Hsiao
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/56
- IPC: H01L21/56 ; H01L23/00 ; H01L23/433 ; H01L23/498 ; H01L23/538

Abstract:
Disclosed herein are a device having an embedded heat spreader and method for forming the same. A carrier substrate may comprise a carrier, an adhesive layer, a base film layer, and a seed layer. A patterned mask is formed with a heat spreader opening and via openings. Vias and a heat spreader may be formed in the pattern mask openings at the same time using a plating process and a die attached to the head spreader by a die attachment layer. A molding compound is applied over the die and heat spreader so that the heat spreader is disposed at the second side of the molded substrate. A first RDL may have a plurality of mounting pads and a plurality of conductive lines is formed on the molded substrate, the mounting pads may have a bond pitch greater than the bond pitch of the die contact pads.
Public/Granted literature
- US20170301608A1 Wafer Level Embedded Heat Spreader Public/Granted day:2017-10-19
Information query
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