Invention Grant
- Patent Title: Method for forming semiconductor package using carbon nano material in molding compound
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Application No.: US15823786Application Date: 2017-11-28
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Publication No.: US10177082B2Publication Date: 2019-01-08
- Inventor: Chun-Hao Tseng , Ying-Hao Kuo , Kuo-Chung Yee
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: H01L21/48
- IPC: H01L21/48 ; H01L21/56 ; H01L23/498 ; H01L23/373 ; H01L23/433 ; H01L23/31
Abstract:
A method of forming a semiconductor package includes growing a layer of carbon nano material on a chip. The chip has a first surface and a second surface and the layer of carbon nano material is grown on the first surface of the chip. The layer of carbon nano material is configured to provide a path through which heat generated from the chip is dissipated. A substrate is attached to the second surface of the chip. A molding compound is formed above the substrate to encapsulate the chip and the layer of carbon nano material.
Public/Granted literature
- US20180090425A1 METHOD FOR FORMING SEMICONDUCTOR PACKAGE USING CARBON NANO MATERIAL IN MOLDING COMPOUND Public/Granted day:2018-03-29
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