Invention Grant
- Patent Title: Method of manufacturing semiconductor device
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Application No.: US15566038Application Date: 2015-05-26
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Publication No.: US10177109B2Publication Date: 2019-01-08
- Inventor: Yosuke Nakata
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- International Application: PCT/JP2015/064998 WO 20150526
- International Announcement: WO2016/189643 WO 20161201
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L21/304 ; H01L21/3205 ; H01L23/522 ; H01L21/768 ; H01L21/3213 ; H01L21/82 ; H01L23/495 ; H01L23/58 ; H01L21/225 ; H01L29/08
Abstract:
The present invention includes: preparing a semiconductor substrate having a first main surface and a second main surface that is located on an opposite side of the first main surface; forming a first electrode on the first main surface; forming a solder-bonding metal film (a first solder-bonding metal film) on the first electrode; forming a sacrificial film on the first solder-bonding metal film; grinding the second main surface after forming the sacrificial film; performing heat treatment after the grinding (forming an element structure on the third main surface side); removing the sacrificial film after the performing heat treatment; and solder-bonding the first solder-bonding metal film and a first external electrode.
Public/Granted literature
- US20180114766A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2018-04-26
Information query
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