Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
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Application No.: US15449001Application Date: 2017-03-03
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Publication No.: US10177118B2Publication Date: 2019-01-08
- Inventor: Mitsumasa Koyanagi , Tetsu Tanaka , Takafumi Fukushima , Kang-Wook Lee
- Applicant: TOHOKU UNIVERSITY , TOSHIBA MEMORY CORPORATION
- Applicant Address: JP Sendai JP Tokyo
- Assignee: TOHOKU UNIVERSITY,TOSHIBA MEMORY CORPORATION
- Current Assignee: TOHOKU UNIVERSITY,TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Sendai JP Tokyo
- Agency: Oliff PLC
- Priority: JP2014-179486 20140903
- Main IPC: H01L23/58
- IPC: H01L23/58 ; H01L25/065 ; H01L23/522 ; H01L21/768 ; H01L23/48 ; H01L23/00 ; H01L25/00

Abstract:
To miniaturize metal columns. A semiconductor device includes a metal column (14) that extends in a stretching direction; a polymer layer (16) that surrounds the metal column from a direction crossing the stretching direction; and a guide (12) that surrounds the polymer layer in the crossing direction so as to be spaced from the metal column with the polymer layer interposed therebetween. A method for manufacturing semiconductor devices includes a step of filling a mixture (20) containing metal particles (22) and polymers (24) in a guide (12); and a step of subjecting the mixture to a heat treatment so that the polymers agglomerate to the guide to form a polymer layer (16) that makes contact with the guide and the metal particles agglomerate away from the guide with the polymer layer interposed therebetween to form a metal column (14) that stretches in a stretching direction of the guide from the metal particles.
Public/Granted literature
- US20170200703A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2017-07-13
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