Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15882432Application Date: 2018-01-29
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Publication No.: US10177138B2Publication Date: 2019-01-08
- Inventor: Takashi Suzuki , Narumasa Soejima , Yosuke Kanie , Kengo Shima
- Applicant: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO , KABUSHIKI KAISHA TOKAI RIKA DENKI SEISAKUSHO
- Applicant Address: JP Nagakute-shi JP Niwa-gun
- Assignee: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO,KABUSHIKI KAISHA TOKAI RIKA DENKI SEISAKUSHO
- Current Assignee: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO,KABUSHIKI KAISHA TOKAI RIKA DENKI SEISAKUSHO
- Current Assignee Address: JP Nagakute-shi JP Niwa-gun
- Agency: Oliff PLC
- Priority: JP2017-024147 20170213
- Main IPC: H01L29/74
- IPC: H01L29/74 ; H01L29/72 ; H01L27/02
Abstract:
A semiconductor device used in a protection circuit including a thyristor and an LCR circuit which includes a coil L, a capacitor C and a resistor R, the semiconductor device may include: a semiconductor layer in which the thyristor is provided; an insulating film provided on the semiconductor layer; and a pair of electrodes provided on the insulating film and connected to a protection target circuit, wherein at least one of the coil L, the capacitor C and the resistor R is provided in the insulating film, and the at least one of the coil L, the capacitor C and the resistor R is connected to an anode of the thyristor by a first metal wire filling a first hole provided in the insulating film.
Public/Granted literature
- US20180233497A1 SEMICONDUCTOR DEVICE Public/Granted day:2018-08-16
Information query
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