Invention Grant
- Patent Title: Structure and method to prevent EPI short between trenches in FinFET eDRAM
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Application No.: US15691182Application Date: 2017-08-30
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Publication No.: US10177154B2Publication Date: 2019-01-08
- Inventor: Michael V. Aquilino , Veeraraghavan S. Basker , Kangguo Cheng , Gregory Costrini , Ali Khakifirooz , Byeong Y. Kim , William L. Nicoll , Ravikumar Ramachandran , Reinaldo A. Vega , Hanfei Wang , Xinhui Wang
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Steven J. Meyers
- Main IPC: H01L29/94
- IPC: H01L29/94 ; H01L27/108 ; H01L27/12 ; H01L27/08
Abstract:
After forming a laterally contacting pair of a semiconductor fin and a conductive strap structure having a base portion vertically contacting a deep trench capacitor embedded in a substrate and a fin portion laterally contacting the semiconductor fin, conducting spikes that are formed on the sidewalls of the deep trench are removed or pushed deeper into the deep trench. Subsequently, a dielectric cap that inhibits epitaxial growth of a semiconductor material thereon is formed over at least a portion of the base portion of the conductive strap structure. The dielectric cap can be formed either over an entirety of the base portion having a stepped structure or on a distal portion of the base portion.
Public/Granted literature
- US20170365606A1 STRUCTURE AND METHOD TO PREVENT EPI SHORT BETWEEN TRENCHES IN FINFET EDRAM Public/Granted day:2017-12-21
Information query
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