Invention Grant
- Patent Title: Semiconductor device and method of fabricating the same
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Application No.: US15661280Application Date: 2017-07-27
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Publication No.: US10177160B2Publication Date: 2019-01-08
- Inventor: Youngbeom Pyon , Kichul Park , Inkwon Kim , Ki Hoon Jang , Byoungho Kwon , Sangkyun Kim , Boun Yoon
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse P.C.
- Priority: KR10-2016-0166910 20161208
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L23/528 ; H01L27/112 ; H01L23/535 ; H01L27/11551 ; H01L27/11578 ; H01L21/768 ; H01L21/02 ; H01L23/538

Abstract:
A semiconductor device includes a substrate, a peripheral structure, a lower insulating layer, and a stack. The substrate includes a peripheral circuit region and a cell array region. The peripheral structure is on the peripheral circuit region. The lower insulating layer covers the peripheral circuit region and the cell array region and has a protruding portion protruding from a flat portion. The stack is on the lower insulating layer and the cell array region, and includes upper conductive patterns and insulating patterns which are alternately and repeatedly stacked.
Public/Granted literature
- US20180166454A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME Public/Granted day:2018-06-14
Information query
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