Invention Grant
- Patent Title: Semiconductor device structure with 110-PFET and 111-NFET current flow direction
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Application No.: US15800489Application Date: 2017-11-01
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Publication No.: US10177169B2Publication Date: 2019-01-08
- Inventor: Pouya Hashemi , Ali Khakifirooz , Shogo Mochizuki , Alexander Reznicek
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Harrington & Smith
- Agent Louis J. Percello
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L27/12 ; H01L21/84 ; H01L29/04 ; H01L21/762 ; H01L21/02 ; H01L21/306 ; H01L21/8238 ; H01L27/092 ; H01L29/161 ; H01L29/167 ; H01L29/06
Abstract:
A FinFET comprises a hybrid substrate having a top wafer of (100) silicon, a handle wafer of (110) silicon, and a buried oxide layer between the top wafer and the handle wafer; a first set of fins disposed in the top wafer and oriented in a direction of the (100) silicon; and a second set of fins disposed in the handle wafer and oriented in a direction of the (110) silicon. The first set of fins and the second set of fins are aligned.
Public/Granted literature
- US20180102295A1 Semiconductor Device Structure With 110-PFET and 111-NFET Current Flow Direction Public/Granted day:2018-04-12
Information query
IPC分类:
