A method for forming a pixel structure is provided. The method includes: forming a gate electrode layer on a substrate; forming a first insulating layer on the gate electrode layer and the substrate; forming a semiconductor layer on the first insulating layer; forming a pixel electrode layer on the first insulating layer and the semiconductor layer; forming a source/drain electrode layer on the pixel electrode layer, the semiconductor layer, and the first insulating layer; forming a second insulating layer on the semiconductor layer, the pixel electrode layer, the source/drain electrode layer, and the first insulating layer; and forming a common electrode layer on the second insulating layer, in which an orthogonal projection of the semiconductor layer on the substrate is complementary to an orthogonal projection of the common electrode layer on the substrate.