Invention Grant
- Patent Title: High dielectric constant dielectric layer forming method, image sensor device, and manufacturing method thereof
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Application No.: US14934648Application Date: 2015-11-06
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Publication No.: US10177185B2Publication Date: 2019-01-08
- Inventor: Tsung-Han Tsai , Horng-Huei Tseng , Hsin-Chieh Huang , Chun-Hao Chou , Kuo-Cheng Lee , Yung-Lung Hsu , Yun-Wei Cheng
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H01L21/311 ; H01L21/02
Abstract:
A method for forming a high dielectric constant (high-κ) dielectric layer on a substrate including performing a pre-clean process on a surface of the substrate. A chloride precursor is introduced on the surface. An oxidant is introduced to the surface to form the high-κ dielectric layer on the substrate. A chlorine concentration of the high-κ dielectric layer is lower than about 8 atoms/cm3.
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