Invention Grant
- Patent Title: Unipolar magnetoelectric magnetic tunnel junction
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Application No.: US15877806Application Date: 2018-01-23
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Publication No.: US10177303B2Publication Date: 2019-01-08
- Inventor: Nishtha Sharma , Peter Dowben , Andrew Marshall
- Applicant: Board of Regents, The University of Texas System , NUtech Ventures
- Applicant Address: US TX Austin
- Assignee: Board of Regents, The University of Texas System
- Current Assignee: Board of Regents, The University of Texas System
- Current Assignee Address: US TX Austin
- Agency: Schott, P.C.
- Main IPC: G11C11/00
- IPC: G11C11/00 ; H01L43/02 ; H01L43/08 ; G11C11/16 ; H01F10/32 ; G11C11/22 ; G11C16/04 ; H01L45/00 ; H01L29/788 ; H01L29/78
Abstract:
A magneto-electric magnetic tunnel junction device (ME-MTJ) that permits direct driving of ME-MTJ devices by a prior ME-MTJ device is the unipolar magneto-electric magnetic tunnel junction (UMMTJ) device. The UMMTJ device enables full logic circuitry to be implemented without level shifting between each logic element.
Public/Granted literature
- US20180212141A1 Unipolar Magnetoelectric Magnetic Tunnel Junction Public/Granted day:2018-07-26
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