Invention Grant
- Patent Title: Isolated gate driver and a power device driving system including the same
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Application No.: US15659318Application Date: 2017-07-25
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Publication No.: US10177756B2Publication Date: 2019-01-08
- Inventor: Soon Seob Lee
- Applicant: HYUNDAI AUTRON CO., LTD.
- Applicant Address: KR Seongnam-si
- Assignee: HYUNDAI AUTRON CO., LTD.
- Current Assignee: HYUNDAI AUTRON CO., LTD.
- Current Assignee Address: KR Seongnam-si
- Agency: Morgan, Lewis & Bockius LLP
- Priority: KR10-2016-0095011 20160726
- Main IPC: H03K17/16
- IPC: H03K17/16 ; H03K17/0812 ; B60L15/20 ; H03K17/691 ; H03K17/06

Abstract:
The isolated gate driver according to the present invention comprises a low voltage part including a PWM transmission unit for receiving a PWM signal from a microcontroller unit and outputting a low voltage PWM signal, and a low voltage logic block for receiving a control signal from the microcontroller unit and outputting a low voltage control signal; an insulation part for boosting the low voltage PWM signal and the low voltage control signal into a high voltage PWM signal and a high voltage control signal, respectively; and a high voltage part including a high voltage logic block for outputting a slew rate control signal in accordance with the high voltage control signal, and a slew rate controller for controlling a slew rate of a gate voltage of a power device external to the isolation gate driver such that the gate voltage of the power device has the slew rate depending on the slew rate control signal at a rising edge or a falling edge, wherein the high voltage part is insulated from the low voltage part by the insulation part.
Public/Granted literature
- US20180034459A1 ISOLATED GATE DRIVER AND A POWER DEVICE DRIVING SYSTEM INCLUDING THE SAME Public/Granted day:2018-02-01
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