Invention Grant
- Patent Title: Circuit with impedance elements connected to sources and drains of pMOSFET headers
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Application No.: US15636428Application Date: 2017-06-28
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Publication No.: US10177760B1Publication Date: 2019-01-08
- Inventor: Andy Wangkun Chen , Yew Keong Chong , Yicong Li , Hsin-Yu Chen , Sriram Thyagarajan
- Applicant: ARM Limited
- Applicant Address: GB Cambridge
- Assignee: ARM Limited
- Current Assignee: ARM Limited
- Current Assignee Address: GB Cambridge
- Agency: Pramudji Law Group PLLC
- Agent Ari Pramudji
- Main IPC: G11C5/06
- IPC: G11C5/06 ; H03K17/687 ; G11C5/14 ; H01L23/64 ; G11C7/10 ; G06F17/50 ; G11C8/08
Abstract:
A method to generate a circuit instance to include a plurality of pMOSFET instances, where each pMOSFET instance has a source terminal instance connected to one or more supply rail instances. The circuit instance includes impedance element instances, where each impedance element instance is connected to a source terminal instance and a drain terminal instance of a corresponding pMOSFET instance. Depending upon a set of requirements, one or more of the impedance element instances are in a high impedance state or a low impedance state.
Public/Granted literature
- US20190007043A1 Circuit with Impedance Elements Connected to Sources and Drains of PMOSFET Headers Public/Granted day:2019-01-03
Information query
