Invention Grant
- Patent Title: Physically unclonable function unit with one single anti-fuse transistor
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Application No.: US16038143Application Date: 2018-07-17
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Publication No.: US10177924B1Publication Date: 2019-01-08
- Inventor: Hsin-Ming Chen , Meng-Yi Wu , Po-Hao Huang
- Applicant: eMemory Technology Inc.
- Applicant Address: TW Hsin-Chu
- Assignee: eMemory Technology Inc.
- Current Assignee: eMemory Technology Inc.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Main IPC: H03K19/00
- IPC: H03K19/00 ; H04L9/32 ; G11C7/06 ; G11C17/16

Abstract:
A physically unclonable function unit includes and anti-fuse transistor and a control circuit. The anti-fuse transistor has a first terminal, a second terminal, and a gate terminal. The control circuit is coupled to the anti-fuse transistor. During an enroll operation, the control circuit applies an enroll voltage to the gate terminal of the anti-fuse transistor and applies a reference voltage to the first terminal and the second terminal of the anti-fuse transistor. The enroll voltage is higher than the reference voltage, and is high enough to create a rupture path on the gate terminal to the first terminal or to the second terminal.
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