The present invention provides a memory cell of a static random access memory based on resistance reinforcement, which includes a latch circuit and a bit selection circuit. The latch circuit consists of two PMOS transistors P1 and P2, two NMOS transistors N1 and N2, a first resistance-capacitance network and a second resistance-capacitance network. The bit selection circuit consists of NMOS transistors N5 and N6. The latch circuit form four storage nodes X1, X1B, X2, X2B. Compared to the conventional memory cell of a 6T structure, a resistance-capacitance network is added, so that without changing the original read operation circuit and without obviously increasing complexity, the memory cell is prevented from having single event upset at a cost of increasing a small amount of area, thus ensuring correctness of data.