Invention Grant
- Patent Title: Semiconductor array and production method for micro device
-
Application No.: US15847630Application Date: 2017-12-19
-
Publication No.: US10192809B2Publication Date: 2019-01-29
- Inventor: Koji Okuno
- Applicant: TOYODA GOSEI CO., LTD.
- Applicant Address: JP Kiyosu-Shi, Aichi-Ken
- Assignee: TOYODA GOSEI CO., LTD.
- Current Assignee: TOYODA GOSEI CO., LTD.
- Current Assignee Address: JP Kiyosu-Shi, Aichi-Ken
- Agency: McGinn IP Law Group, PLLC.
- Priority: JP2016-257142 20161228
- Main IPC: H01L21/82
- IPC: H01L21/82 ; H01L23/482 ; H01L27/15 ; H01L33/32 ; H01L33/62 ; H01L29/20 ; H01L29/778 ; H01L21/764 ; H01L21/768 ; H01L27/085
Abstract:
There are provided a semiconductor array and a method for producing a micro device, in which the semiconductor laminate used in the micro device can be readily separated from the substrate. The semiconductor array includes a substrate, a bridging portion bridged to the substrate, a plurality of semiconductor laminates arranged on the bridging portion, and first voids defined by the substrate and the bridging portion. The bridging portion has a plurality of through holes formed at least one of the leg portion and the top portion. The first void communicates with the outside of the semiconductor array via the through holes. Each of the semiconductor laminates is in direct contact with each of the top portions.
Public/Granted literature
- US20180182689A1 SEMICONDUCTOR ARRAY AND PRODUCTION METHOD FOR MICRO DEVICE Public/Granted day:2018-06-28
Information query
IPC分类:
