- Patent Title: Image sensor including dual isolation and method of making the same
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Application No.: US14886290Application Date: 2015-10-19
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Publication No.: US10192918B2Publication Date: 2019-01-29
- Inventor: Jeng-Shyan Lin , Dun-Nian Yaung , Jen-Cheng Liu , Chun-Chieh Chuang , Volume Chien
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H01L21/762 ; H01L21/8238
Abstract:
An image sensor includes a substrate having a pixel region and a periphery region. The image sensor further includes a first isolation structure formed in the pixel region; the first isolation structure including a first trench having a first depth. The image sensor further includes a second isolation structure formed in the periphery region; the second isolation structure including a second trench having a second depth. The second depth is greater than the first depth.
Public/Granted literature
- US20160043121A1 IMAGE SENSOR INCLUDING DUAL ISOLATION AND METHOD OF MAKING THE SAME Public/Granted day:2016-02-11
Information query
IPC分类:
