Invention Grant
- Patent Title: Polymer on graphene
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Application No.: US15419719Application Date: 2017-01-30
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Publication No.: US10192971B2Publication Date: 2019-01-29
- Inventor: Jody G. Redepenning , Alexander Sinitskii , Benjamin Wymore
- Applicant: NUtech Ventures
- Applicant Address: US NE Lincoln
- Assignee: NUtech Ventures
- Current Assignee: NUtech Ventures
- Current Assignee Address: US NE Lincoln
- Agency: Fish & Richardson P.C.
- Main IPC: H01L29/51
- IPC: H01L29/51 ; H01L21/02 ; H01L29/66 ; H01L29/16 ; H01L29/49 ; H01L29/786 ; H01L21/04 ; H01L29/423
Abstract:
A top-gated graphene field effect transistor can be fabricated by forming a layer of graphene on a substrate, and applying an electrochemical deposition process to deposit a layer of dielectric polymer on the graphene layer. An electric potential between the graphene layer and a reference electrode is cycled between a lower potential and a higher potential. A top gate is formed above the polymer.
Public/Granted literature
- US20170141202A1 POLYMER ON GRAPHENE Public/Granted day:2017-05-18
Information query
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