A semiconductor apparatus includes: a p-type base layer provided on a top surface side of an n-type drift layer; an n-type emitter layer provided on a top surface side of the p-type base layer; a first control electrode having a trench gate electrode embedded so as to reach from a surface layer of the n-type emitter layer to the n-type drift layer; a second control electrode having a trench gate electrode embedded so as to reach from the p-type base layer to the n-type drift layer; a p-type collector layer provided on a bottom surface side of the n-type drift layer; and a diode whose anode side and cathode side are connected to the first control electrode and the second control electrodes, respectively. It is possible to improve the controllability of dV/dt by a gate resistor.