Invention Grant
- Patent Title: Light emitting diode chip
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Application No.: US15967430Application Date: 2018-04-30
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Publication No.: US10193019B2Publication Date: 2019-01-29
- Inventor: Ming-Lun Lee
- Applicant: Everlight Electronics Co., Ltd. , Southern Taiwan University of Science and Technology
- Applicant Address: TW New Taipei TW Tainan
- Assignee: Everlight Electronics Co., Ltd.,Southern Taiwan University of Science and Technology
- Current Assignee: Everlight Electronics Co., Ltd.,Southern Taiwan University of Science and Technology
- Current Assignee Address: TW New Taipei TW Tainan
- Agency: Chen Yoshimura LLP
- Priority: TW103117640 20140520; TW103208802U 20140520
- Main IPC: H01L33/22
- IPC: H01L33/22 ; H01L33/10 ; H01L33/00 ; H01L33/20 ; H01L33/56 ; H01L33/60 ; H01L33/06 ; H01L33/42 ; H01L33/12

Abstract:
A light emitting diode chip including a substrate and a light emitting diode element layer is provided. The substrate has a growth surface and a plurality of microstructures on the growth surface. An area of the growth surface occupied by the microstructures is A1 and an area of the growth surface not occupied by the micro-structures is A2, such that A1 and A2 satisfy the relation of 0.1≤A2/(A1+A2)≤0.5. The light emitting diode element layer is disposed on the growth surface of the substrate.
Public/Granted literature
- US20180254381A1 LIGHT EMITTING DIODE CHIP Public/Granted day:2018-09-06
Information query
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