Invention Grant
- Patent Title: Semiconductor light-emitting element, and manufacturing method for same
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Application No.: US15561028Application Date: 2016-03-18
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Publication No.: US10193021B2Publication Date: 2019-01-29
- Inventor: Hiroyuki Togawa , Masakazu Sugiyama
- Applicant: STANLEY ELECTRIC CO., LTD. , THE UNIVERSITY OF TOKYO
- Applicant Address: JP Tokyo JP Tokyo
- Assignee: STANLEY ELECTRIC CO., LTD.,THE UNIVERSITY OF TOKYO
- Current Assignee: STANLEY ELECTRIC CO., LTD.,THE UNIVERSITY OF TOKYO
- Current Assignee Address: JP Tokyo JP Tokyo
- Agency: Holtz, Holtz & Volek PC
- Priority: JP2015-059260 20150323
- International Application: PCT/JP2016/058676 WO 20160318
- International Announcement: WO2016/152772 WO 20160929
- Main IPC: H01L33/24
- IPC: H01L33/24 ; H01L33/06 ; H01L33/22 ; H01L33/32 ; H01L33/00 ; H01L33/14

Abstract:
A light-emitting layer includes: a base layer with a plurality of base segments that have a composition subject to stress strain from a first semiconductor layer and are formed in a random net shape; and a quantum well structure layer including at least one quantum well layer and at least one barrier layer that are formed on the base layer. The base layer includes: a first sub-base layer; a trench that partitions the first sub-base layer for each of the plurality of base segments; and a second sub-base layer formed to bury the first sub-base layer.
Public/Granted literature
- US20180062037A1 SEMICONDUCTOR LIGHT-EMITTING ELEMENT, AND MANUFACTURING METHOD FOR SAME Public/Granted day:2018-03-01
Information query
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