Invention Grant
- Patent Title: Apparatus and techniques for anisotropic substrate etching
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Application No.: US15639029Application Date: 2017-06-30
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Publication No.: US10193066B2Publication Date: 2019-01-29
- Inventor: Glen F. R. Gilchrist , Raees Pervaiz , Kenneth Starks , Shurong Liang , Tyler Rockwell
- Applicant: Varian Semiconductor Equipment Associates, Inc.
- Applicant Address: US MA Gloucester
- Assignee: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
- Current Assignee: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
- Current Assignee Address: US MA Gloucester
- Main IPC: H01L21/3065
- IPC: H01L21/3065 ; H01L21/3213 ; H01J37/32 ; H01L21/67 ; H01L45/00
Abstract:
A method may include generating a plasma in a plasma chamber, the plasma comprising an etchant species and extracting a pulsed ion beam from the plasma chamber and directing the pulsed ion beam to a substrate, where the pulsed ion beam comprises an ON portion and an OFF portion. During the OFF portion the substrate may not be biased with respect to the plasma chamber, and the duration of the OFF portion may be less than a transit time of the etchant species from the plasma chamber to the substrate.
Public/Granted literature
- US20190006587A1 APPARATUS AND TECHNIQUES FOR ANISOTROPIC SUBSTRATE ETCHING Public/Granted day:2019-01-03
Information query
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