Invention Grant
- Patent Title: Ultra-low noise, highly stable single-mode operation, high power, Bragg grating based semiconductor laser
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Application No.: US15683380Application Date: 2017-08-22
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Publication No.: US10193306B2Publication Date: 2019-01-29
- Inventor: Paul A. Morton
- Applicant: Morton Photonics Incorporated
- Applicant Address: US MD West Friendship
- Assignee: Morton Photonics Incorporated
- Current Assignee: Morton Photonics Incorporated
- Current Assignee Address: US MD West Friendship
- Agency: Myers Wolin, LLC
- Main IPC: H01S5/14
- IPC: H01S5/14 ; H01S5/024 ; H01S5/028 ; H01S5/06 ; H01S5/0687 ; H01S5/10 ; H01S5/12 ; H01S5/125

Abstract:
A laser including: a gain chip; an external cavity incorporating a Bragg grating; and a baseplate; wherein a first end of the gain chip has a high reflectivity facet forming a first end of the laser cavity; a second end of the gain chip has a low reflectivity facet; and a second part of the external cavity comprises a Bragg grating, supported by the baseplate, the temperature of the baseplate being maintained through a feedback loop; wherein the optical length of the external cavity is at least an order of magnitude greater than the optical length of the gain chip; wherein the Bragg grating is physically long and occupies a majority of the length of the external cavity and is apodized to control the sidemodes of the grating reflection.
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