Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15081840Application Date: 2016-03-25
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Publication No.: US10193337B2Publication Date: 2019-01-29
- Inventor: Suguru Kawasoe
- Applicant: LAPIS Semiconductor Co., Ltd.
- Applicant Address: JP Yokohama
- Assignee: LAPIS Semiconductor Co., Ltd.
- Current Assignee: LAPIS Semiconductor Co., Ltd.
- Current Assignee Address: JP Yokohama
- Agency: Rabin & Berdo, P.C.
- Priority: JP2015-063718 20150326
- Main IPC: H02H9/04
- IPC: H02H9/04

Abstract:
A semiconductor device includes: a voltage regulator generating, based on a power supply voltage, an internal power supply voltage having a voltage value lower than that of the power supply voltage and to apply the internal power supply voltage to a power supply line; an internal circuit receiving the internal power supply voltage via the power supply line and a grounding line; and a protection circuit in which first to n-th transistors of PNP type which are Darlington-connected. A collector terminal of each of the first to the n-th transistors is connected to the grounding line. An emitter terminal of the first transistor within the first to the n-th transistors is connected to the power supply line while a base terminal of the n-th transistor within the first to the n-th transistors is connected to the grounding line.
Public/Granted literature
- US20160285260A1 SEMICONDUCTOR DEVICE Public/Granted day:2016-09-29
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