Invention Grant
- Patent Title: Sputtering target
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Application No.: US14404522Application Date: 2013-05-31
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Publication No.: US10196733B2Publication Date: 2019-02-05
- Inventor: Mami Nishimura , Shigeo Matsuzaki , Masashi Ohyama
- Applicant: Idemitsu Kosan Co., Ltd.
- Applicant Address: JP Tokyo
- Assignee: IDEMITSU KOSAN CO., LTD.
- Current Assignee: IDEMITSU KOSAN CO., LTD.
- Current Assignee Address: JP Tokyo
- Agency: Foley & Lardner LLP
- Priority: JP2012-125450 20120531
- International Application: PCT/JP2013/003445 WO 20130531
- International Announcement: WO2013/179676 WO 20131205
- Main IPC: C23C14/08
- IPC: C23C14/08 ; H01J37/34 ; C04B35/453 ; C23C14/34 ; C23C14/58

Abstract:
A sputtering target comprising an oxide sintered body that includes an indium element, a tin element and a zinc element, wherein the oxide sintered body includes one or more selected from a hexagonal layered compound represented by In2O3(ZnO)m, a hexagonal layered compound represented by InXO3(ZnO)n, a rutile structure compound represented by SnO2 and an ilmenite structure compound represented by ZnSnO3, and a spinel structure compound represented by Zn2SnO4, in the formulas, X is a metal element that can form a hexagonal layered compound together with an indium element and a zinc element, m is an integer of 1 or more and n is an integer of 1 or more, and an agglomerate of the spinel structure compound is 5% or less of the entire sintered body.
Public/Granted literature
- US20150354053A1 SPUTTERING TARGET Public/Granted day:2015-12-10
Information query
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