Invention Grant
- Patent Title: ISFET measuring probe, measurement circuit for the ISFET measuring probe, and method
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Application No.: US15431856Application Date: 2017-02-14
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Publication No.: US10197528B2Publication Date: 2019-02-05
- Inventor: Ingo Andreas Schneider , Petr Horn
- Applicant: Mettler-Toledo GmbH
- Applicant Address: CH Greifensee
- Assignee: Mettler-Toledo GmbH
- Current Assignee: Mettler-Toledo GmbH
- Current Assignee Address: CH Greifensee
- Agency: Standley Law Group LLP
- Priority: EP16157123 20160224
- Main IPC: G01N27/416
- IPC: G01N27/416 ; G01N27/414 ; G01N27/30 ; G01N31/22

Abstract:
ISFET measuring probe with a housing in which an ISFET and a reference electrode are arranged in such a way that the gate electrode of the ISFET, which is coated with an ion-sensitive layer, and the reference electrode reach into a measurement space into which a measurement medium can be introduced, with the distinguishing feature that an auxiliary electrode is arranged additionally inside the housing and is held inside the measurement space.
Public/Granted literature
- US20170241944A1 ISFET MEASURING PROBE, MEASUREMENT CIRCUIT FOR THE ISFET MEASURING PROBE, AND METHOD Public/Granted day:2017-08-24
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