Invention Grant
- Patent Title: Apparatuses and methods for providing bias signals in a semiconductor device
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Application No.: US15833688Application Date: 2017-12-06
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Publication No.: US10199081B1Publication Date: 2019-02-05
- Inventor: Kenji Asaki , Shuichi Tsukada
- Applicant: MICRON TECHNOLOGY, INC.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dorsey & Whitney LLP
- Main IPC: H03B1/00
- IPC: H03B1/00 ; G11C7/12 ; H03K17/687

Abstract:
Apparatuses and methods for providing bias signals in a semiconductor device are described. As example apparatus includes a power supply line configured to provide a supply voltage and further includes first and second nodes. An impedance element is coupled between the power supply line and the first node and a first transistor having a gate, a source coupled to the first node, and a drain coupled to the second node. A reference line is configured to provide a reference voltage. A second transistor has a gate, a source coupled to the reference line, and a drain. The gate and the drain of the second transistor are coupled to the gate of the first transistor.
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