Invention Grant
- Patent Title: Apparatuses and methods for sensing a phase-change test cell and determining changes to the test cell resistance due to thermal exposure
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Application No.: US15855671Application Date: 2017-12-27
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Publication No.: US10199097B2Publication Date: 2019-02-05
- Inventor: Jason Brand , Jason Snodgress
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dorsey & Whitney, LLP
- Main IPC: G11C7/04
- IPC: G11C7/04 ; G11C13/00 ; G11C29/50

Abstract:
A phase change memory array may include at least one cell used to determine whether the array has been altered by thermal exposure over time. The cell may be the same or different from the other cells. In some embodiments, the cell is only read in response to an event. If, in response to that reading, it is determined that the cell has changed state or resistance, it may deduce whether the change is a result of thermal exposure. Corrective measures may then be taken.
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