Invention Grant
- Patent Title: Non-volatile memory devices, operating methods thereof and memory systems including the same
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Application No.: US15664303Application Date: 2017-07-31
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Publication No.: US10199116B2Publication Date: 2019-02-05
- Inventor: Sun-Il Shim , Jae-Hoon Jang , Donghyuk Chae , Youngho Lim , Hansoo Kim , Jaehun Jeong
- Applicant: Sun-Il Shim , Jae-Hoon Jang , Donghyuk Chae , Youngho Lim , Hansoo Kim , Jaehun Jeong
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2010-0014275 20100217
- Main IPC: G11C16/10
- IPC: G11C16/10 ; G11C16/34 ; G11C16/04 ; H01L27/11582 ; G11C16/08 ; G11C16/12 ; G11C16/14 ; G11C16/26 ; H01L27/1157

Abstract:
Nonvolatile memory devices, operating methods thereof, and memory systems including the same. A nonvolatile memory device may include a memory cell array and a word line driver. The memory cell array may include a plurality of memory cells. The word line driver may be configured to apply word line voltages to a plurality of word lines connected to the plurality of memory cells, respectively. Magnitudes of the word line voltages may be determined according to locations of the plurality of word lines.
Public/Granted literature
- US20170330632A1 NON-VOLATILE MEMORY DEVICES, OPERATING METHODS THEREOF AND MEMORY SYSTEMS INCLUDING THE SAME Public/Granted day:2017-11-16
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