Invention Grant
- Patent Title: Stacked metal inductor
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Application No.: US15282404Application Date: 2016-09-30
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Publication No.: US10199157B2Publication Date: 2019-02-05
- Inventor: Chi-Taou Robert Tsai , Lillian Lent , Curtiss Roberts , Cindy Muir
- Applicant: Intel IP Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel IP Corporation
- Current Assignee: Intel IP Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schiff Hardin LLP
- Main IPC: H01F27/28
- IPC: H01F27/28 ; H01F41/04

Abstract:
An inductor has a conductor layer formed by multiple concentric co-planar turns of ultra-thick metal (UTM) adapted to receive current at a frequency of at least one gigahertz. The multiple turns of UTM proceed from an innermost turn to an outermost turn, and aluminum stacking is provided over all of the UTM turns except at least the innermost turn, thereby optimizing the Q of the inductor.
Public/Granted literature
- US20180096779A1 STACKED METAL INDUCTOR Public/Granted day:2018-04-05
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